N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227 IXYS IXTN22N100L
- RS Stock No.:
- 686-7865
- Mfr. Part No.:
- IXTN22N100L
- Brand:
- IXYS
7 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each
$88.60
(exc. GST)
$97.46
(inc. GST)
| Units | Per unit |
| 1 - 2 | $88.60 |
| 3 - 4 | $87.81 |
| 5 + | $87.11 |
- RS Stock No.:
- 686-7865
- Mfr. Part No.:
- IXTN22N100L
- Brand:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 22 A |
| Maximum Drain Source Voltage | 1000 V |
| Package Type | SOT-227B |
| Series | Linear |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 600 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.5V |
| Maximum Power Dissipation | 700 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Typical Gate Charge @ Vgs | 270 nC @ 15 V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 38.2mm |
| Width | 25.07mm |
| Minimum Operating Temperature | -55 °C |
| Height | 9.6mm |