- RS Stock No.:
- 168-4584
- Mfr. Part No.:
- IXTN200N10L2
- Brand:
- IXYS
On back order for despatch 12/03/2025, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Tube of 10)
$72.44
(exc. GST)
$79.68
(inc. GST)
Units | Per unit | Per Tube* |
10 - 40 | $72.44 | $724.40 |
50 + | $65.196 | $651.96 |
*price indicative |
- RS Stock No.:
- 168-4584
- Mfr. Part No.:
- IXTN200N10L2
- Brand:
- IXYS
Legislation and Compliance
- COO (Country of Origin):
- PH
Product Details
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 178 A |
Maximum Drain Source Voltage | 100 V |
Package Type | SOT-227 |
Series | Linear L2 |
Mounting Type | Screw Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 11 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.5V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 830 W |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 25.07mm |
Maximum Operating Temperature | +150 °C |
Length | 38.23mm |
Typical Gate Charge @ Vgs | 540 nC @ 10 V |
Forward Diode Voltage | 1.4V |
Height | 9.6mm |
Minimum Operating Temperature | -55 °C |
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