N-Channel MOSFET, 162 A, 40 V, 3-Pin I2PAK Infineon IRF1404LPBF

RS Stock No.:: 543-0822
Mfr. Part No.:: IRF1404LPBF
Brand:: Infineon

N-Channel MOSFET, 162 A, 40 V, 3-Pin I2PAK Infineon IRF1404LPBF

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$4.41

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$4.85

(inc. GST)

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Units	Per unit
1 - 12	$4.41
13 - 24	$4.34
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**price indicative

RS Stock No.:: 543-0822
Mfr. Part No.:: IRF1404LPBF
Brand:: Infineon

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 162A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRF1404LPBF

This MOSFET provides an efficient solution in various electronic applications, particularly where high performance is essential. Its advanced processing techniques make it suitable for automation and electronic control systems, contributing to modern power management devices.

Features & Benefits

• Delivers a continuous drain current of 162A for robust performance
• Withstands a maximum drain-source voltage of 40V for safe operation
• Exhibits low on-resistance (RDS(on)) of 4 mΩ, enhancing energy efficiency
• Utilises enhancement mode technology for improved switching performance
• Supports through-hole mounting, facilitating integration into existing designs

Applications

• Used in high current circuits for power regulation
• Suitable for power supply designs in industrial automation
• Applied in electric motor drives and control systems
• Ideal for DC-DC converters in renewable energy systems

What is the maximum power dissipation capability?

It can handle power dissipation up to 3.8W under specific conditions, ensuring optimal performance without overheating during operation.

Is it compatible with surface mount designs?

While primarily in the I2PAK package for through-hole applications, it can be integrated into other industrial designs requiring robust components.

How should it be mounted for optimal performance?

Follow proper through-hole mounting techniques to ensure secure soldering, preventing thermal and mechanical failures during operation.

What are the implications of exceeding the specified limits?

Exceeding the continuous drain current or voltage limits may cause thermal overload or permanent damage to the device, affecting overall system reliability.

Can this component be reused after installation?

Reinstallation is possible if careful removal techniques are employed, though repeated thermal cycling may impact long-term reliability.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	162 A
	Maximum Drain Source Voltage	40 V
	Series	HEXFET
	Package Type	I2PAK (TO-262)
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	3.8 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+175 °C
	Width	4.83mm
	Length	10.67mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Typical Gate Charge @ Vgs	160 nC @ 10 V
	Height	9.65mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 162 A
	Maximum Drain Source Voltage 40 V
	Series HEXFET
	Package Type I2PAK (TO-262)
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 3.8 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +175 °C
	Width 4.83mm
	Length 10.67mm
	Number of Elements per Chip 1
	Transistor Material Si
	Typical Gate Charge @ Vgs 160 nC @ 10 V
	Height 9.65mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V