N-Channel MOSFET, 23 A, 150 V, 3-Pin TO-220AB Infineon IRF3315PBF

RS Stock No.:: 542-9226
Mfr. Part No.:: IRF3315PBF
Brand:: Infineon

N-Channel MOSFET, 23 A, 150 V, 3-Pin TO-220AB Infineon IRF3315PBF

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RS Stock No.:: 542-9226
Mfr. Part No.:: IRF3315PBF
Brand:: Infineon

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 94W Maximum Power Dissipation - IRF3315PBF

This high-performance MOSFET is designed for a variety of electronic applications. With an N-channel configuration, it plays a vital role in power management solutions, enabling efficient switching in circuits that handle high current and voltage levels. Its robust features meet the requirements of automation, electronics, and mechanical applications.

Features & Benefits

• Continuous drain current rating supports demanding applications
• Maximum drain-source voltage of 150V ensures dependable performance
• Low Rds(on) value reduces power loss in high-frequency applications
• Operable at temperatures up to +175°C for enhanced durability
• Dual gate threshold voltage range ensures compatibility with various circuits
• Suitable for enhancement mode operation for increased performance flexibility

Applications

• Utilised in power supply circuits for effective voltage regulation
• Integrated into motor control solutions for optimal output management
• Used in automotive that require dependability
• Applicable in industrial automation systems that demand precision
• Employed in renewable energy systems to improve power management

How can I determine the suitability for my application?

Evaluating specifications such as maximum current and voltage ratings will help ascertain compatibility with your application’s requirements.

What installation considerations should I be aware of?

Proper heatsinking and thermal management should be ensured, given the potential for high power dissipation and maximum operating temperatures.

How does the gate threshold voltage affect functionality?

The threshold voltage impacts the device’s switching characteristics and must align with the driving signal levels in your circuit for optimal performance.

Can it handle high-frequency switching applications?

Yes, its low Rds(on) and fast switching characteristics make it suitable for high-frequency operations without excessive heat generation.

What is the expected lifespan of the component under continuous use?

Lifespan varies based on operating conditions, but keeping temperatures below maximum ratings can significantly enhance longevity and reliability.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	23 A
	Maximum Drain Source Voltage	150 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	70 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	94 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	10.54mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Width	4.69mm
	Typical Gate Charge @ Vgs	95 nC @ 10 V
	Transistor Material	Si
	Height	8.77mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 23 A
	Maximum Drain Source Voltage 150 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 70 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 94 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 10.54mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Width 4.69mm
	Typical Gate Charge @ Vgs 95 nC @ 10 V
	Transistor Material Si
	Height 8.77mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V