Infineon Dual N BSD840N 2 Type N-Channel OptiMOSTM2 Small-Signal-Transistors, 880 mA, 20 V Dual N, 6-Pin SOT-363
- RS Stock No.:
- 250-0525
- Mfr. Part No.:
- BSD840NH6327XTSA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
$381.00
(exc. GST)
$420.00
(inc. GST)
FREE delivery for orders over $80.00 ex GST
Temporarily out of stock
- 9,000 unit(s) shipping from 18 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | $0.127 | $381.00 |
| 6000 - 6000 | $0.114 | $342.00 |
| 9000 + | $0.103 | $309.00 |
*price indicative
- RS Stock No.:
- 250-0525
- Mfr. Part No.:
- BSD840NH6327XTSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | OptiMOSTM2 Small-Signal-Transistors | |
| Maximum Continuous Drain Current Id | 880mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Series | BSD840N | |
| Mount Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Dual N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 750mV | |
| Maximum Power Dissipation Pd | 400mW | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 0.26nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual N | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type OptiMOSTM2 Small-Signal-Transistors | ||
Maximum Continuous Drain Current Id 880mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Series BSD840N | ||
Mount Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Dual N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 750mV | ||
Maximum Power Dissipation Pd 400mW | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 0.26nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual N | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Infineon BSD840N Series OptiMOSTM2 Small-Signal-Transistors, 20V Drain-Source Voltage, 0.88A Continuous Drain Current - BSD840NH6327XTSA1
This optimostm2 small-signal-transistors device is a dual N-channel MOSFET designed for Compact signal-handling and switching tasks in automotive-grade environments. It operates at low gate voltage and provides a balance between on-resistance and current capability for control circuits in constrained layouts. The package and construction suit board-level implementation where thermal endurance and regulatory material standards are required.
Features and Benefits:
• 400mΩ Rds reduces conduction losses for low-power switching
• 0.75V maximum gate threshold enables low-voltage drive compatibility
• 0.26nC gate charge minimises switching energy and drive requirements
• 0.88A continuous current supports modest load currents reliably
• 150°C maximum temperature rating allows high-temperature operation
• 0.75V maximum gate threshold enables low-voltage drive compatibility
• 0.26nC gate charge minimises switching energy and drive requirements
• 0.88A continuous current supports modest load currents reliably
• 150°C maximum temperature rating allows high-temperature operation
Applications
• Suitable for dual-channel signal switching in automotive electronics
• Ideal for low-voltage gate-drive power management circuits
• Used with Compact board layouts requiring SOT-363 packaging
• Can be used for sensor Interface switching in harsh environments
• Used for dual MOSFET arrangements in control modules
• Ideal for low-voltage gate-drive power management circuits
• Used with Compact board layouts requiring SOT-363 packaging
• Can be used for sensor Interface switching in harsh environments
• Used for dual MOSFET arrangements in control modules
What package type does it use for Compact designs?
It is supplied in a SOT-363 package with six pins suitable for dense PCB placement.
Which automotive standard does it meet for qualification?
It fulfils an automotive component qualification standard applicable to discrete semiconductors.
What temperature range can the device operate within?
It is specified for operation from -55°C up to 150°C.
How many transistors are available per chip and how are they configured?
The chip contains two elements arranged as a dual N configuration.
Which material and environmental standard applies to its construction?
The device conforms to RoHS and relevant IEC material specifications.
Related links
- Infineon Dual N BSD840N 2 Type P-Channel OptiMOSTM2 Small-Signal-Transistors 20 V Dual N, 6-Pin SOT-363
- Infineon Dual N Channel Normal Level IPG20N06S4-15A 2 Type N-Channel MOSFET 60 V Dual N, 8-Pin SuperSO8 5 x 6
- Infineon Dual N Channel OptiMOSTM 2 Type N-Channel MOSFET & Diode 30 V, 8-Pin SuperSO8 5 x 6
- ROHM US6K1 Dual N-Channel MOSFET 30 V, 6-Pin SOT-363 US6K1TR
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Type N-Channel MOSFET 100 V Dual N, 8-Pin TDSON
- Infineon Dual N Channel Normal Level Enhancement Mode IPG16N10S4-61 Type N-Channel MOSFET 100 V Dual N, 8-Pin
- Nexperia Dual N/P-Channel MOSFET 350 mA 6-Pin SOT-363 NX3008CBKS,115
- Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET 55 V Enhancement, 8-Pin SO-8