ROHM US6K1 Dual N-Channel MOSFET, 1.5 A, 30 V, 6-Pin SOT-363 US6K1TR
- RS Stock No.:
- 133-2949
- Mfr. Part No.:
- US6K1TR
- Brand:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
$23.625
(exc. GST)
$26.00
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | $0.945 | $23.63 |
| 125 - 225 | $0.917 | $22.93 |
| 250 - 1225 | $0.89 | $22.25 |
| 1250 - 2475 | $0.864 | $21.60 |
| 2500 + | $0.838 | $20.95 |
*price indicative
- RS Stock No.:
- 133-2949
- Mfr. Part No.:
- US6K1TR
- Brand:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.5 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | US6K1 | |
| Package Type | SOT-363 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 340 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 1 W | |
| Transistor Configuration | Dual Base | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Length | 2.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.8mm | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 1.6 nC @ 4.5 V | |
| Height | 0.82mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Series US6K1 | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 340 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 1 W | ||
Transistor Configuration Dual Base | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Length 2.1mm | ||
Maximum Operating Temperature +150 °C | ||
Width 1.8mm | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 1.6 nC @ 4.5 V | ||
Height 0.82mm | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- JP
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