Infineon F4 Quad SiC N-Channel MOSFET Module, 100 A, 1200 V AG-EASY2B F411MR12W2M1B76BOMA1
- RS Stock No.:
- 234-8960
- Mfr. Part No.:
- F411MR12W2M1B76BOMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tray of 15 units)*
$8,395.17
(exc. GST)
$9,234.69
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tray* |
|---|---|---|
| 15 - 15 | $559.678 | $8,395.17 |
| 30 - 30 | $531.695 | $7,975.43 |
| 45 + | $505.111 | $7,576.67 |
*price indicative
- RS Stock No.:
- 234-8960
- Mfr. Part No.:
- F411MR12W2M1B76BOMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | AG-EASY2B | |
| Series | F4 | |
| Mounting Type | Screw Mount | |
| Maximum Drain Source Resistance | 0.0113 Ω | |
| Maximum Gate Threshold Voltage | 5.55V | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 4 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type AG-EASY2B | ||
Series F4 | ||
Mounting Type Screw Mount | ||
Maximum Drain Source Resistance 0.0113 Ω | ||
Maximum Gate Threshold Voltage 5.55V | ||
Transistor Material SiC | ||
Number of Elements per Chip 4 | ||
The Infineon IGBT module has a 4 N-Channel (Half Bridge) FET Type works with 1200V Drain to Source Voltage and 100A continuous drain current.
Chassis mount
-40°C to 150°C operating temperature
-40°C to 150°C operating temperature
Related links
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