Vishay TrenchFET Type N-Channel MOSFET, 65 A, 100 V Enhancement, 8-Pin SO-8 SIR668DP-T1-RE3

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Subtotal (1 pack of 2 units)*

$4.13

(exc. GST)

$4.544

(inc. GST)

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  • 7,358 unit(s) ready to ship from another location
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Units
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Per Pack*
2 - 748$2.065$4.13
750 - 1498$2.015$4.03
1500 +$1.99$3.98

*price indicative

Packaging Options:
RS Stock No.:
134-9725
Mfr. Part No.:
SIR668DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.05mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

72nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

104W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.25mm

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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