Dual N-Channel MOSFET, 16.3 A, 850 V, 3-Pin TO-247AC Vishay SIHG21N80AEF-GE3
- RS Stock No.:
- 228-2868
- Mfr. Part No.:
- SIHG21N80AEF-GE3
- Brand:
- Vishay
On back order for despatch 29/01/2025, delivery within 10 working days from despatch date.
Price (ex. GST) Each (In a Pack of 2)
$5.095
(exc. GST)
$5.605
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | $5.095 | $10.19 |
| 10 - 24 | $4.945 | $9.89 |
| 26 - 98 | $4.80 | $9.60 |
| 100 - 498 | $4.655 | $9.31 |
| 500 + | $4.52 | $9.04 |
*price indicative
- RS Stock No.:
- 228-2868
- Mfr. Part No.:
- SIHG21N80AEF-GE3
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Low effective capacitance (Co(er))
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 16.3 A |
| Maximum Drain Source Voltage | 850 V |
| Package Type | TO-247AC |
| Series | E Series |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.25 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Number of Elements per Chip | 2 |
| Transistor Material | Si |
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