N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-220 FP Infineon IPAW60R180P7SXKSA1
- RS Stock No.:
- 222-4884
- Mfr. Part No.:
- IPAW60R180P7SXKSA1
- Brand:
- Infineon
1230 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Tube of 45)
$2.25
(exc. GST)
$2.47
(inc. GST)
Units | Per unit | Per Tube* |
---|---|---|
45 - 90 | $2.25 | $101.25 |
135 - 180 | $2.19 | $98.55 |
225 + | $2.145 | $96.525 |
*price indicative
- RS Stock No.:
- 222-4884
- Mfr. Part No.:
- IPAW60R180P7SXKSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 18 A |
Maximum Drain Source Voltage | 650 V |
Series | CoolMOS™ P7 |
Package Type | TO-220 FP |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 180 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.5V |
Transistor Material | Si |
Number of Elements per Chip | 1 |
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