Infineon CoolMOS N-Channel MOSFET, 2.5 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R2K4P7ATMA1

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Subtotal (1 pack of 20 units)*

$26.36

(exc. GST)

$29.00

(inc. GST)

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Units
Per unit
Per Pack*
20 - 20$1.318$26.36
40 - 80$1.277$25.54
100 - 220$1.237$24.74
240 - 480$1.202$24.04
500 +$1.167$23.34

*price indicative

Packaging Options:
RS Stock No.:
222-4689
Mfr. Part No.:
IPN80R2K4P7ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

800V

Package Type

SOT-223

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

7.5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

6.3W

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

900mV

Maximum Operating Temperature

150°C

Length

6.7mm

Height

1.8mm

Standards/Approvals

No

Width

3.7mm

Automotive Standard

No

The Infineon design of Cool MOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

Product validation acc. JEDEC Standard

Low switching losses (Eoss) Integrated ESD protection diode

Excellent thermal behaviour

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