N-Channel MOSFET, 4 A, 800 V, 3-Pin SOT-223 Infineon IPN95R2K0P7ATMA1
- RS Stock No.:
- 215-2534
- Mfr. Part No.:
- IPN95R2K0P7ATMA1
- Brand:
- Infineon
220 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 20)
$1.271
(exc. GST)
$1.398
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | $1.271 | $25.42 |
| 760 - 1480 | $1.238 | $24.76 |
| 1500 + | $1.219 | $24.38 |
*price indicative
- RS Stock No.:
- 215-2534
- Mfr. Part No.:
- IPN95R2K0P7ATMA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon 950V Cool MOS™ P7 series designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V Cool MOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V Cool MOS™ C3, the 950V Cool MOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V Cool MOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. Cool MOS™ P7 is developed with best-in-class VGS(the) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.
Best-in-class FOMRDS(on)*Eoss
reduced Qg, Ciss, and Coss
Best-in-class SOT-223 RDS(on)
Best-in-class Cool MOS™ quality and reliability
Fully optimized portfolio
Best-in-class SOT-223 RDS(on)
Best-in-class Cool MOS™ quality and reliability
Fully optimized portfolio
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Voltage | 800 V |
| Series | CoolMOS™ |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
Related links
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