Infineon CoolMOS Type N-Channel MOSFET, 9.4 A, 700 V Enhancement, 3-Pin SOT-223

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Subtotal (1 reel of 3000 units)*

$1,047.00

(exc. GST)

$1,152.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000$0.349$1,047.00
6000 - 6000$0.339$1,017.00
9000 +$0.332$996.00

*price indicative

RS Stock No.:
222-4686
Mfr. Part No.:
IPN70R1K2P7SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9.4A

Maximum Drain Source Voltage Vds

700V

Series

CoolMOS

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.2Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

6.3W

Typical Gate Charge Qg @ Vgs

4.8nC

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

3.7 mm

Length

6.7mm

Height

1.8mm

Automotive Standard

No

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Product validation acc. JEDEC Standard

Low switching losses (Eoss) Integrated ESD protection diode

Excellent thermal behaviour

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