Infineon CoolMOS Type N-Channel MOSFET, 1.9 A, 80 V Enhancement, 3-Pin TO-252 IPD80R2K8CEATMA1

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$18.96

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$20.85

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  • 1,875 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
15 - 15$1.264$18.96
30 - 75$1.241$18.62
90 - 225$1.219$18.29
240 - 465$1.197$17.96
480 +$1.175$17.63

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Packaging Options:
RS Stock No.:
222-4675
Mfr. Part No.:
IPD80R2K8CEATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-252

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.8Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

42W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

12nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

6.22 mm

Height

2.41mm

Length

6.73mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

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