Infineon OptiMOS-TM3 Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin TSDSON

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 5000 units)*

$5,185.00

(exc. GST)

$5,705.00

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 5,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
5000 - 20000$1.037$5,185.00
25000 +$0.933$4,665.00

*price indicative

RS Stock No.:
222-4633
Mfr. Part No.:
BSZ150N10LS3GATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS-TM3

Package Type

TSDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

15mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

26nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

63W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

1.2mm

Length

5.35mm

Width

6.1 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

Related links