Infineon OptiMOS-TM3 Type N-Channel MOSFET, 114 A, 40 V Enhancement, 8-Pin TSDSON BSZ028N04LSATMA1

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$19.11

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$21.015

(inc. GST)

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15 - 15$1.274$19.11
30 - 75$1.251$18.77
90 - 225$1.228$18.42
240 - 465$1.206$18.09
480 +$1.184$17.76

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Packaging Options:
RS Stock No.:
222-4627
Mfr. Part No.:
BSZ028N04LSATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

114A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS-TM3

Package Type

TSDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

32nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

63W

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.35mm

Width

6.1 mm

Height

1.2mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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