Infineon OptiMOS™ Silicon N-Channel MOSFET, 114 A, 40 V, 8-Pin TSDSON-8 FL BSZ028N04LSATMA1

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Subtotal (1 pack of 15 units)*

$19.11

(exc. GST)

$21.015

(inc. GST)

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  • Plus 16,815 unit(s) shipping from 17 November 2025
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Per Pack*
15 - 15$1.274$19.11
30 - 75$1.251$18.77
90 - 225$1.228$18.42
240 - 465$1.206$18.09
480 +$1.184$17.76

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Packaging Options:
RS Stock No.:
222-4627
Mfr. Part No.:
BSZ028N04LSATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

114 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS™

Package Type

TSDSON-8 FL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0028 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating

RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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