Infineon 500V CoolMOS CE Type N-Channel MOSFET, 4.8 A, 500 V N, 3-Pin TO-252 IPD50R1K4CEAUMA1

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Subtotal (1 pack of 50 units)*

$40.75

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$44.80

(inc. GST)

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50 - 600$0.815$40.75
650 - 1200$0.795$39.75
1250 +$0.783$39.15

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Packaging Options:
RS Stock No.:
218-3047
Mfr. Part No.:
IPD50R1K4CEAUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.8A

Maximum Drain Source Voltage Vds

500V

Series

500V CoolMOS CE

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

N

Forward Voltage Vf

0.83V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

25W

Typical Gate Charge Qg @ Vgs

8.2nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.73mm

Height

2.41mm

Width

6.22 mm

Automotive Standard

No

The Infineon 500V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. This series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Very high commutation ruggedness

Easy to use/drive

Pb-free plating, Halogen free mold compound

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