N-Channel MOSFET, 4.8 A, 500 V, 3-Pin DPAK Infineon IPD50R1K4CEAUMA1
- RS Stock No.:
- 218-3046
- Mfr. Part No.:
- IPD50R1K4CEAUMA1
- Brand:
- Infineon
Stock check temporarily unavailable - call for stock availability
Price (ex. GST) Each (On a Reel of 2500)
$0.312
(exc. GST)
$0.343
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 10000 | $0.312 | $780.00 |
| 12500 + | $0.281 | $702.50 |
*price indicative
- RS Stock No.:
- 218-3046
- Mfr. Part No.:
- IPD50R1K4CEAUMA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon 500V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. This series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
Easy to use/drive
Pb-free plating, Halogen free mold compound
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4.8 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | DPAK (TO-252) |
| Series | CoolMOS™ CE |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.4 Ω |
| Maximum Gate Threshold Voltage | 3.5V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
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