Infineon 700V CoolMOS P7 N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 215-2508
- Mfr. Part No.:
- IPD70R600P7SAUMA1
- Brand:
- Infineon
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Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 10000 | $0.436 | $1,090.00 |
| 12500 + | $0.392 | $980.00 |
*price indicative
- RS Stock No.:
- 215-2508
- Mfr. Part No.:
- IPD70R600P7SAUMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-252 | |
| Series | 700V CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Maximum Power Dissipation Pd | 10.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-252 | ||
Series 700V CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Maximum Power Dissipation Pd 10.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon 700V CoolMOS P7 Series MOSFET, 700V Drain Source Voltage, 8.5A Continuous Drain Current - IPD70R600P7SAUMA1
This MOSFET is a high-voltage, N‑channel switching transistor designed for surface‑mount power applications. It operates in enhancement mode and is intended for circuits requiring elevated drain-source voltage capability while providing moderate conduction performance and thermal handling for compact SMD layouts.
Features and Benefits:
• 700V drain-source rating enables high‑voltage switching duties
• 8.5A continuous drain current supports sustained load conduction
• 600mΩ Rds(on) limits conduction losses in medium‑power designs
• 10.5W maximum power dissipation permits reliable thermal margin
• 10.5nC typical gate charge gives faster gate transitions
• ±20V gate tolerance allows standard gate‑drive voltages
• 8.5A continuous drain current supports sustained load conduction
• 600mΩ Rds(on) limits conduction losses in medium‑power designs
• 10.5W maximum power dissipation permits reliable thermal margin
• 10.5nC typical gate charge gives faster gate transitions
• ±20V gate tolerance allows standard gate‑drive voltages
Applications
• Suitable for high‑voltage switch‑mode power supplies
• Ideal for primary‑side power conversion stages
• Used with resonant and hard‑switched topologies
• Can be used for industrial lighting ballasts
• Employed in compact SMD power modules
• Ideal for primary‑side power conversion stages
• Used with resonant and hard‑switched topologies
• Can be used for industrial lighting ballasts
• Employed in compact SMD power modules
What temperature range can it withstand in operation?
It is specified to operate from -55°C up to 150°C, covering wide thermal environments.
How many electrical connections does it present for PCB layout?
The device has three pins in a TO‑252 surface‑mount package requiring conventional SMD footprint design.
What conduction characteristic determines voltage drop during on‑state?
The on‑state resistance of 600mΩ defines the voltage drop at a given drain current and affects conduction losses.
How does gate drive affect switching performance?
The typical gate charge of 10.5nC at Vgs conditions influences required drive current and switching speed for a given gate‑driver capability.
Related links
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-252 IPD70R600P7SAUMA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V N, 3-Pin TO-220 IPA70R600P7SXKSA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V N, 3-Pin TO-220
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-252
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-252
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-252 IPD70R360P7SAUMA1
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- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin IPAK