Infineon OptiMOS N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1
- RS Stock No.:
- 214-8969
- Mfr. Part No.:
- BSC010N04LSIATMA1
- Brand:
- Infineon
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Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 20000 | $0.885 | $4,425.00 |
| 25000 + | $0.796 | $3,980.00 |
*price indicative
- RS Stock No.:
- 214-8969
- Mfr. Part No.:
- BSC010N04LSIATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 275A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.05mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 700mV | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 139W | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Height | 1.2mm | |
| Width | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 275A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.05mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 700mV | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 139W | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Height 1.2mm | ||
Width 6.1mm | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 40V Drain Source Voltage, 275A Continuous Drain Current - BSC010N04LSIATMA1
This MOSFET is a high‑current switching component designed for demanding power applications. It operates across a very wide ambient temperature range and is intended for surface‑mounted PCB implementations in Compact assemblies. The device features an enhancement‑mode N‑channel and supports gate‑drive voltages appropriate for robust switching control.
Features and Benefits:
• Low conduction resistance delivers efficient high‑current switching
• High continuous drain current enables substantial load driving
• 40 V drain‑source rating permits medium‑voltage system use
• 139 W dissipation supports elevated power handling
• 87 nC typical gate charge allows predictable switching energy
• 20 V gate‑source tolerance provides headroom for gate drive
• High continuous drain current enables substantial load driving
• 40 V drain‑source rating permits medium‑voltage system use
• 139 W dissipation supports elevated power handling
• 87 nC typical gate charge allows predictable switching energy
• 20 V gate‑source tolerance provides headroom for gate drive
Applications
• Suitable for high‑current DC motor drives
• Used for power distribution in battery systems
• Ideal for synchronous rectification in converters
• Can be used for server and telecoms power stages
• Used with inverter modules requiring robust switches
• Used for power distribution in battery systems
• Ideal for synchronous rectification in converters
• Can be used for server and telecoms power stages
• Used with inverter modules requiring robust switches
What temperature extremes can it withstand in operation?
It is rated for continuous use from −55 °C up to +175 °C.
What package and mounting style does it use for PCB assembly?
It is supplied in a TDSON package intended for surface mounting.
How many electrical connections are available for layout and routing?
The device uses an 8‑pin configuration for power and gate connections.
What gate drive behaviour should designers expect during switching?
Designers should plan for a typical gate charge of 87 nC when calculating drive losses and switching times.
What physical footprint should be allowed when placing the component?
The package measures 5.35 mm in length, 6.1 mm in width and 1.2 mm in height.
Related links
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON
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- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON