Infineon HEXFET Type N-Channel MOSFET, 82 A, 75 V, 3-Pin TO-263 IRF2807STRLPBF

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Subtotal (1 pack of 10 units)*

$24.30

(exc. GST)

$26.70

(inc. GST)

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In Stock
  • 850 unit(s) ready to ship from another location
  • Plus 2,550 unit(s) shipping from 06 January 2026
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Units
Per unit
Per Pack*
10 - 190$2.43$24.30
200 - 390$2.369$23.69
400 +$2.332$23.32

*price indicative

Packaging Options:
RS Stock No.:
214-4444
Mfr. Part No.:
IRF2807STRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

82A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13mΩ

Maximum Power Dissipation Pd

230W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

160nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-39-413

This Infineon HEXFET Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides reliable and efficient device

It is fully avalanche rated

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