Infineon HEXFET Type N-Channel MOSFET, 82 A, 75 V, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

$1,113.60

(exc. GST)

$1,224.80

(inc. GST)

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  • 2,400 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
800 - 3200$1.392$1,113.60
4000 +$1.252$1,001.60

*price indicative

RS Stock No.:
214-4443
Mfr. Part No.:
IRF2807STRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

82A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13mΩ

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

160nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

230W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This Infineon HEXFET Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides reliable and efficient device

It is fully avalanche rated

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