N-Channel MOSFET, 89 A, 75 V, 3-Pin D2PAK Infineon IRF2807ZSTRLPBF

RS Stock No.:: 165-5889
Mfr. Part No.:: IRF2807ZSTRLPBF
Brand:: Infineon

N-Channel MOSFET, 89 A, 75 V, 3-Pin D2PAK Infineon IRF2807ZSTRLPBF

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Subtotal (1 reel of 800 units)**

$1,376.00

(exc. GST)

$1,512.00

(inc. GST)

Available for back order.*

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Units	Per unit	Per Reel**
800 - 3200	$1.72	$1,376.00
4000 +	$1.548	$1,238.40

**price indicative

RS Stock No.:: 165-5889
Mfr. Part No.:: IRF2807ZSTRLPBF
Brand:: Infineon

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 89A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRF2807ZSTRLPBF

This MOSFET is designed for high-performance switching applications, offering efficiency and reliability across various electronic circuits. Its low on-resistance and strong thermal characteristics make it essential for users in automation, electrical, and mechanical sectors, enabling effective power management and reduced energy loss.

Features & Benefits

• Continuous drain current up to 89A
• Maximum drain-source voltage of 75V
• Operating temperature up to +175°C for thermal stability
• Low Rds(on) of 9.4 mΩ to reduce power loss
• Quick switching abilities enhance system responsiveness
• Enhancement mode device for optimal operation

Applications

• Used in power supply circuits for efficient energy conversion
• Employed in automotive and industrial systems for motor control
• Suitable for DC-DC converters and switching regulators
• Applicable in high-frequency switching in electronics
• Utilised for overload protection in various electrical systems

What is the maximum gate-source voltage this component can handle?

It can manage a maximum gate-source voltage of ±20V, ensuring compatibility with diverse control signals.

How does this component perform under high temperatures?

With a maximum operating temperature of +175°C, it remains stable and functional in high-temperature environments, making it suitable for such applications.

What is the purpose of the low on-resistance feature?

The low on-resistance minimises heat generation and enhances efficiency during operation, which is important for high current applications.

Can it be used in both surface mount and through-hole designs?

This device is specifically designed for surface mount technology in a D2PAK package, optimising space and thermal performance.

How does the switching speed benefit system design?

Fast switching improves overall system efficiency and allows for compact design by facilitating higher frequency operation in power management solutions.

For these production packs, non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	89 A
Maximum Drain Source Voltage	75 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	9.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	170 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	10.67mm
Transistor Material	Si
Typical Gate Charge @ Vgs	71 nC @ 10 V
Width	9.65mm
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Height	4.83mm