N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STMicroelectronics STWA68N65DM6

RS Stock No.:: 212-2108
Mfr. Part No.:: STWA68N65DM6
Brand:: STMicroelectronics

N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STMicroelectronics STWA68N65DM6

On back order for despatch 05/07/2025, delivery within 10 working days from despatch date.

Price (ex. GST) Each (In a Tube of 30)

$16.364

(exc. GST)

$18.00

(inc. GST)

Units	Per unit	Per Tube*
30 - 30	$16.364	$490.92
60 - 90	$15.955	$478.65
120 +	$15.71	$471.30

*price indicative

RS Stock No.:: 212-2108
Mfr. Part No.:: STWA68N65DM6
Brand:: STMicroelectronics

Technical data sheets

DataSheet - STWA68N65DM6

Legislation and Compliance

Product Details

MDMesh M6 MOSFET N-CH

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converter.

Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	48 A
Maximum Drain Source Voltage	650 V
Package Type	TO-247
Series	STWA68N65DM6
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	0.059 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.75V
Number of Elements per Chip	1
Transistor Material	Si