N-Channel MOSFET, 10 A, 3-Pin DPAK STMicroelectronics STD11N60DM2
- RS Stock No.:
- 188-8285
- Mfr. Part No.:
- STD11N60DM2
- Brand:
- STMicroelectronics
2235 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (On a Reel of 2500)
$1.502
(exc. GST)
$1.652
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | $1.502 | $3,755.00 |
| 5000 - 7500 | $1.475 | $3,687.50 |
| 10000 + | $1.442 | $3,605.00 |
*price indicative
- RS Stock No.:
- 188-8285
- Mfr. Part No.:
- STD11N60DM2
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 10 A |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 420 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 110 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±25 V |
| Length | 6.6mm |
| Typical Gate Charge @ Vgs | 16.5 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Width | 6.2mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 2.17mm |
| Forward Diode Voltage | 1.6V |
Related links
- N-Channel MOSFET, 10 A, 3-Pin DPAK STMicroelectronics STD11N60DM2
- N-Channel MOSFET, 10 A, 600 V, 3-Pin DPAK STMicroelectronics STD12N60DM6
- N-Channel MOSFET, 10 A, 480 V Depletion, 3-Pin DPAK...
- N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK STMicroelectronics STD13N65M2
- P-Channel MOSFET, 10 A, 60 V, 3-Pin DPAK STMicroelectronics STD10P6F6
- N-Channel MOSFET, 11 A, 3-Pin DPAK STMicroelectronics STD13N60DM2
- N-Channel MOSFET, 7 A, 3-Pin DPAK STMicroelectronics STD8N65M5
- N-Channel MOSFET, 7 A, 3-Pin DPAK STMicroelectronics STD11N65M2