SiC N-Channel MOSFET, 45 A, 1200 V, 4-Pin HiP247-4 STMicroelectronics SCTWA40N120G2V-4

RS Stock No.:: 212-2093
Mfr. Part No.:: SCTWA40N120G2V-4
Brand:: STMicroelectronics

SiC N-Channel MOSFET, 45 A, 1200 V, 4-Pin HiP247-4 STMicroelectronics SCTWA40N120G2V-4

On back order for despatch 25/09/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (In a Tube of 30)

$27.325

(exc. GST)

$30.057

(inc. GST)

Units	Per unit	Per Tube*
30 - 120	$27.325	$819.75
150 +	$24.593	$737.79
*price indicative

RS Stock No.:: 212-2093
Mfr. Part No.:: SCTWA40N120G2V-4
Brand:: STMicroelectronics

Technical data sheets

DataSheet - SCTWA40N120G2V-4

Legislation and Compliance

Product Details

SiC MOSFET

The STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designer to operate at very high switching frequencies, reducing the size of passive components for smaller form factors.

Very low switching losses
Low power losses at high temperatures
Higher operating temperature (up to 200 ˚C)
Body diode with no recovery losses
Easy to drive

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	45 A
Maximum Drain Source Voltage	1200 V
Series	SCTWA40N120G2V-4
Package Type	HiP247-4
Mounting Type	Through Hole
Pin Count	4
Maximum Drain Source Resistance	0.07 Ω
Transistor Material	SiC