SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTWA30N120
- RS Stock No.:
- 202-5494
- Mfr. Part No.:
- SCTWA30N120
- Brand:
- STMicroelectronics
7 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each
$49.78
(exc. GST)
$54.76
(inc. GST)
| Units | Per unit |
| 1 - 7 | $49.78 |
| 8 - 14 | $49.44 |
| 15 + | $48.00 |
- RS Stock No.:
- 202-5494
- Mfr. Part No.:
- SCTWA30N120
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very fast and robust intrinsic body diode
Low capacitance
Low capacitance
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 45 A |
| Maximum Drain Source Voltage | 1200 V |
| Series | SCT |
| Package Type | HiP247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.09 Ω |
| Channel Mode | Depletion |
| Maximum Gate Threshold Voltage | 3.5V |
| Number of Elements per Chip | 1 |
| Transistor Material | SiC |