- RS Stock No.:
- 204-3951
- Mfr. Part No.:
- SCT30N120H
- Brand:
- STMicroelectronics
On back order for despatch 22/05/2025, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (On a Reel of 1000)
$30.371
(exc. GST)
$33.408
(inc. GST)
Units | Per unit | Per Reel* |
1000 - 4000 | $30.371 | $30,371.00 |
5000 + | $29.369 | $29,369.00 |
*price indicative |
- RS Stock No.:
- 204-3951
- Mfr. Part No.:
- SCT30N120H
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the devices housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability (TJ = 200°C)
Very fast and robust intrinsic body diode
Low capacitance
Very high operating junction temperature capability (TJ = 200°C)
Very fast and robust intrinsic body diode
Low capacitance
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 45 A |
Maximum Drain Source Voltage | 1200 V |
Series | SCT30N120H |
Package Type | HiP247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 0.09 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Number of Elements per Chip | 1 |
Transistor Material | SiC |
Related links
- SiC N-Channel SiC Power Module 1200 V, 3-Pin HiP247...
- Dual SiC N-Channel SiC Power Module 1200 V, 4-Pin C ROHM BSM120D12P2C005
- SiC SiC Power Module, 3-Pin TO-220 onsemi FFSP3065A
- SiC N-Channel SiC Power Module 1200 V, 3-Pin HiP247...
- SiC N-Channel SiC Power Module 650 V, 3-Pin HiP247...
- SiC N-Channel SiC Power Module 1200 V, 36-Pin F2 onsemi NXH006P120MNF2PTG
- Dual SiC N-Channel SiC Power Module 1200 V, 4-Pin C ROHM BSM180D12P3C007
- ROHM 4th Generation SiC MOSFET Half Bridge Evaluation Board SiC...