STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 tube of 30 units)*

$991.35

(exc. GST)

$1,090.50

(inc. GST)

Add to Basket
Select or type quantity
Orders below $60.00 (exc. GST) cost $12.95.
Last RS stock
  • Final 300 unit(s), ready to ship from another location
Units
Per unit
Per Tube*
30 - 120$33.045$991.35
150 +$29.74$892.20

*price indicative

RS Stock No.:
168-8966
Mfr. Part No.:
SCT30N120
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

270W

Forward Voltage Vf

3.5V

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

105nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

200°C

Standards/Approvals

No

Height

20.15mm

Length

15.75mm

Width

5.15 mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics


Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and Compact systems.

MOSFET Transistors, STMicroelectronics


Related links