Vishay SiSS30ADN Type N-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 reel of 3000 units)*

$2,991.00

(exc. GST)

$3,291.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000$0.997$2,991.00
6000 - 9000$0.972$2,916.00
12000 +$0.957$2,871.00

*price indicative

RS Stock No.:
210-5010
Mfr. Part No.:
SiSS30ADN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

54.7A

Maximum Drain Source Voltage Vds

80V

Series

SiSS30ADN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

57W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19.5nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

0.83mm

Length

3.4mm

Width

3.4 mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK 1212-8S package type with 54.7 A drain current.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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