Vishay SiSS30ADN Type N-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiSS30ADN-T1-GE3

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$17.54

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$19.29

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Per Pack*
10 - 740$1.754$17.54
750 - 1490$1.712$17.12
1500 +$1.688$16.88

*price indicative

Packaging Options:
RS Stock No.:
210-5011
Mfr. Part No.:
SiSS30ADN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

54.7A

Maximum Drain Source Voltage Vds

80V

Series

SiSS30ADN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.5nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

57W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

3.4mm

Standards/Approvals

No

Width

3.4 mm

Height

0.83mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK 1212-8S package type with 54.7 A drain current.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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