N-Channel MOSFET, 55.5 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay SISS30LDN-T1-GE3

RS Stock No.:: 188-4902
Mfr. Part No.:: SISS30LDN-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 55.5 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay SISS30LDN-T1-GE3

On back order for despatch 11/12/2024, delivery within 10 working days from despatch date.

Price (ex. GST) Each (On a Reel of 3000)

$0.865

(exc. GST)

$0.951

(inc. GST)

Units	Per unit	Per Reel*
3000 - 3000	$0.865	$2,595.00
6000 - 9000	$0.843	$2,529.00
12000 +	$0.83	$2,490.00

*price indicative

RS Stock No.:: 188-4902
Mfr. Part No.:: SISS30LDN-T1-GE3
Brand:: Vishay

Datasheet SISS30LDN-T1-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	55.5 A
Maximum Drain Source Voltage	80 V
Package Type	PowerPAK 1212-8S
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	12 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	57 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Width	3.3mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	32.5 nC @ 10 V
Length	3.3mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.1V
Height	0.78mm

N-Channel MOSFET, 55.5 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay SISS30LDN-T1-GE3

Related links