DiodesZetex Dual DMN3061 1 Type N-Channel MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT DMN3061SVT-7

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$15.675

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$17.25

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25 - 725$0.627$15.68
750 - 1475$0.621$15.53
1500 +$0.602$15.05

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Packaging Options:
RS Stock No.:
206-0083
Mfr. Part No.:
DMN3061SVT-7
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.4A

Maximum Drain Source Voltage Vds

30V

Package Type

TSOT

Series

DMN3061

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

200mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.08W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.5nC

Forward Voltage Vf

0.7V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Length

2.9mm

Height

0.9mm

Standards/Approvals

No

Width

1.6 mm

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN
The DiodesZetex 30V dual N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20 V with 0.88W thermal power dissipation.

Low input capacitance

Fast switching speed

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