SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 onsemi NTHL080N120SC1A

RS Stock No.:: 205-2501
Mfr. Part No.:: NTHL080N120SC1A
Brand:: onsemi

SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 onsemi NTHL080N120SC1A

This product is currently unavailable to backorder.

Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.

Added

Price (ex. GST) Each (In a Tube of 450)

$15.569

(exc. GST)

$17.126

(inc. GST)

Units	Per unit	Per Tube*
450 - 450	$15.569	$7,006.05
900 - 1350	$15.179	$6,830.55
1800 +	$14.946	$6,725.70
*price indicative

RS Stock No.:: 205-2501
Mfr. Part No.:: NTHL080N120SC1A
Brand:: onsemi

Technical data sheets

Datasheet - NTHL080N120SC1A

Legislation and Compliance

Product Details

Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L

The ON Semiconductor NTH series SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Continuous Drain Current rating is 31A
Drain to source on resistance rating is 110mohm
High speed switching and low capacitance
100% UIL tested
Low effective output capacitance
Package type is TO-247-3LD

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	1200 V
Package Type	TO-247
Series	NTH
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	110 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.5V
Transistor Material	SiC
Number of Elements per Chip	1