MPN

onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247

RS Stock No.:: 254-7669
Mfr. Part No.:: NTH4L025N065SC1
Brand:: onsemi

onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 450 units)*

$9,823.05

(exc. GST)

$10,805.40

(inc. GST)

FREE delivery for orders over $60.00 ex GST

Temporarily out of stock

Shipping from 08 May 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
450 - 450	$21.829	$9,823.05
900 - 900	$21.392	$9,626.40
1350 +	$20.965	$9,434.25

*price indicative

RS Stock No.:: 254-7669
Mfr. Part No.:: NTH4L025N065SC1
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	58A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-247
	Series	NTH
	Mount Type	Through Hole
	Pin Count	7
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	4.5V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Power Dissipation Pd	117W
	Typical Gate Charge Qg @ Vgs	164nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS with exemption 7a, Pb-Free 2LI
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 58A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-247
	Series NTH
	Mount Type Through Hole
	Pin Count 7
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 4.5V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Power Dissipation Pd 117W
	Typical Gate Charge Qg @ Vgs 164nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS with exemption 7a, Pb-Free 2LI
	Automotive Standard AEC-Q101

Datasheet - NTH4L025N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, TO247−4L

The ON Semiconductor NTH series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Used in telecommunication

Ultra low gate charge

High speed switching and low capacitance

onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247

FREE delivery for orders over $60.00 ex GST

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, TO247−4L

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