N-Channel MOSFET, 337 A, 80 V, 8-Pin DFN onsemi NVMTS1D2N08HOS
- RS Stock No.:
- 195-2677
- Mfr. Part No.:
- NVMTS1D2N08H
- Brand:
- onsemi
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price (ex. GST) Each (In a Pack of 5)
$9.71
(exc. GST)
$10.68
(inc. GST)
| Units | Per unit | Per Pack* |
| 5 - 745 | $9.71 | $48.55 |
| 750 - 1495 | $9.47 | $47.35 |
| 1500 + | $9.324 | $46.62 |
| *price indicative | ||
- RS Stock No.:
- 195-2677
- Mfr. Part No.:
- NVMTS1D2N08H
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank capable for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (8x8 mm)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Compact Design
Low RDS(on)
Minimize Conduction Losses
Low QG and Capacitance
Minimize Driver Losses
Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Application
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 337 A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | DFN |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 1.1 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 300 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 147 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Width | 8mm |
| Length | 8.1mm |
| Automotive Standard | AEC-Q101 |
| Minimum Operating Temperature | -55 °C |
| Height | 1.15mm |
| Forward Diode Voltage | 1.2V |