Vishay SiHD2N80AE Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin TO-252 SIHD2N80AE-GE3

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Subtotal (1 pack of 10 units)*

$14.31

(exc. GST)

$15.74

(inc. GST)

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Units
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Per Pack*
10 - 490$1.431$14.31
500 - 990$1.413$14.13
1000 +$1.374$13.74

*price indicative

Packaging Options:
RS Stock No.:
188-4982
Mfr. Part No.:
SIHD2N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.9A

Maximum Drain Source Voltage Vds

800V

Series

SiHD2N80AE

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.9Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

7nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

62.5W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.73mm

Width

6.22 mm

Height

2.25mm

Automotive Standard

No

Distrelec Product Id

304-38-847

E Series Power MOSFET.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

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