Vishay TrenchFET Type N-Channel Power MOSFET, 2.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2302DDS-T1-GE3

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Subtotal (1 pack of 25 units)*

$12.825

(exc. GST)

$14.10

(inc. GST)

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Last RS stock
  • 100 left, ready to ship from another location
  • Final 75 unit(s) shipping from 13 January 2026
Units
Per unit
Per Pack*
25 - 725$0.513$12.83
750 +$0.50$12.50

*price indicative

Packaging Options:
RS Stock No.:
152-6358
Mfr. Part No.:
SI2302DDS-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

2.9A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

0.86W

Maximum Gate Source Voltage Vgs

±8 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.5nC

Maximum Operating Temperature

150°C

Width

1.4 mm

Height

1.02mm

Length

3.04mm

Standards/Approvals

IEC 61249-2-21, RoHS

Automotive Standard

No

Halogen-free

TrenchFET® Power MOSFET

100 % Rg Tested

APPLICATIONS

Load Switching for Portable Devices

DC/DC Converter

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