MPN

Vishay EF Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247

RS Stock No.:: 178-0893
Mfr. Part No.:: SIHG33N60EF-GE3
Brand:: Vishay

Vishay EF Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 50 units)*

$309.30

(exc. GST)

$340.25

(inc. GST)

FREE delivery for orders over $60.00 ex GST

In Stock

450 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 - 50	$6.186	$309.30
100 - 150	$6.031	$301.55
200 +	$5.939	$296.95

*price indicative

RS Stock No.:: 178-0893
Mfr. Part No.:: SIHG33N60EF-GE3
Brand:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-247
	Series	EF
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	98mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	103nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	278W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	5.31 mm
	Height	20.82mm
	Standards/Approvals	No
	Length	15.87mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-247
	Series EF
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 98mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 103nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 278W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 5.31 mm
	Height 20.82mm
	Standards/Approvals No
	Length 15.87mm
	Automotive Standard No

SiHG33N60EF, EF Series Power MOSFET with Fast Body Diode

COO (Country of Origin):: CN

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current

Low figure-of-merit (FOM)

Low input capacitance (Ciss)

Increased robustness due to low Reverse Recovery Charge

Ultra low gate charge (Qg)

Vishay EF Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247

FREE delivery for orders over $60.00 ex GST

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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