N-Channel MOSFET, 203 A, 80 V, 5-Pin DFN onsemi NTMFS6H800NT1G

RS Stock No.:: 172-8974
Mfr. Part No.:: NTMFS6H800NT1G
Brand:: onsemi

N-Channel MOSFET, 203 A, 80 V, 5-Pin DFN onsemi NTMFS6H800NT1G

Available for back order.

Price (ex. GST) Each (In a Pack of 5)

$9.05

(exc. GST)

$9.95

(inc. GST)

Units	Per unit	Per Pack*
5 - 370	$9.05	$45.25
375 - 745	$8.824	$44.12
750 +	$8.686	$43.43

*price indicative

RS Stock No.:: 172-8974
Mfr. Part No.:: NTMFS6H800NT1G
Brand:: onsemi

Technical data sheets

Datasheet

Legislation and Compliance

Product Details

ON Semiconductor MOSFET

The ON Semiconductor DFN5 surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 2.1mohm at a gate-source voltage of 10V. It has continuous drain current of 203A and maximum power dissipation of 200W. The minimum and a maximum driving voltage for this transistor are 6V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Compact design
• Lead (Pb) free
• Low QG and capacitance
• Low QG and capacitance to minimize driver losses
• Low RDS (on) to minimize conduction losses
• Minimize conduction losses
• Minimize driver losses
• Operating temperature ranges between -55°C and 175°C
• Small footprint (5x6 mm)

Applications

• 48V systems
• DC/DC converter
• Load switch
• Motor control
• Power switches (high side driver, low side driver, H-bridges etc.)
• Switching power supplies
• Synchronous rectifier

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	203 A
Maximum Drain Source Voltage	80 V
Package Type	DFN
Mounting Type	Surface Mount
Pin Count	5
Maximum Drain Source Resistance	3.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	200 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Number of Elements per Chip	1
Length	6.1mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	85 nC @ 10 V
Width	5.1mm
Forward Diode Voltage	1.2V
Height	1.1mm
Minimum Operating Temperature	-55 °C