onsemi SiC Power Type N-Channel MOSFET, 203 A, 100 V Enhancement, 7-Pin TO-263
- RS Stock No.:
- 229-6445
- Mfr. Part No.:
- NTBGS004N10G
- Brand:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 800 units)*
$4,246.40
(exc. GST)
$4,671.20
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- Shipping from 16 June 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 1600 | $5.308 | $4,246.40 |
| 2400 - 3200 | $5.121 | $4,096.80 |
| 4000 + | $4.883 | $3,906.40 |
*price indicative
- RS Stock No.:
- 229-6445
- Mfr. Part No.:
- NTBGS004N10G
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 203A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SiC Power | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Maximum Power Dissipation Pd | 240W | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.4mm | |
| Width | 4.7 mm | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 203A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SiC Power | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Maximum Power Dissipation Pd 240W | ||
Maximum Operating Temperature 175°C | ||
Height 9.4mm | ||
Width 4.7 mm | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor power MOSFET has rugged technology for utmost reliability. It is specifically designed for wide SOA applications from a 48V bus.
Hot swap tolerant with superior SOA curve
ROHS compliant
Reduces conduction loss
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