ROHM QS8M51 Dual N/P-Channel MOSFET, 2 A, 1.5 A, 100 V, 8-Pin TSMT-8 QS8M51TR

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Unavailable
RS will no longer stock this product.
RS Stock No.:
172-0542
Mfr. Part No.:
QS8M51TR
Brand:
ROHM
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Brand

ROHM

Channel Type

N, P

Maximum Continuous Drain Current

2 A, 1.5 A

Maximum Drain Source Voltage

100 V

Package Type

TSMT-8

Series

QS8M51

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

355 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5 (N Channel) V, 2.5 (P Channel) V

Minimum Gate Threshold Voltage

1 (N Channel) V, 1 (P Channel) V

Maximum Power Dissipation

1.5 W

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

4.7 nC @ 5 V

Length

3.1mm

Number of Elements per Chip

2

Width

2.5mm

Maximum Operating Temperature

+150 °C

Height

0.8mm

Forward Diode Voltage

1.2V

COO (Country of Origin):
JP
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

4Ｖ-drive type
Nch+Nch Middle-power MOSFET
Fast Switching Speed
Small Surface Mount Package
Pb Free
Applications:
Coin Processing Machines
Portable Data Terminal
Digital Multimeter: Handy Type
Motor Control: Brushless DC
PLC (Programmable Logic Controller)
AC Servo
Network Attached Storage
DVR/DVS
Motor Control: Stepper Motor
Motor Control: Brushed DC
POS (Point Of Sales System)
Electric Bike
Embedded PC
Smart Meter
Surveillance Camera
X-ray Inspection Machine for Security
Surveillance Camera for Network
Intercom / Baby Monitor
Machine Vision Camera for Industrial
Fingerprint Authentication Device
GFCI(Ground Fault Circuit Interrupter)
Digital Multimeter: Bench Type
Display for EMS
Solar Power Inverters

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