ROHM RQ7E100AT P-Channel MOSFET, 10 A, 30 V, 8-Pin TSMT-8 RQ7E100ATTCR
- RS Stock No.:
- 184-7657
- Mfr. Part No.:
- RQ7E100ATTCR
- Brand:
- ROHM
Bulk discount available
Subtotal (1 pack of 10 units)*
$16.46
(exc. GST)
$18.11
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Last RS stock
- Final 10 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | $1.646 | $16.46 |
| 50 - 90 | $1.596 | $15.96 |
| 100 - 190 | $1.549 | $15.49 |
| 200 + | $1.502 | $15.02 |
*price indicative
- RS Stock No.:
- 184-7657
- Mfr. Part No.:
- RQ7E100ATTCR
- Brand:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TSMT-8 | |
| Series | RQ7E100AT | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 14.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 3.1mm | |
| Width | 2.5mm | |
| Maximum Operating Temperature | 150 °C | |
| Typical Gate Charge @ Vgs | 53 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Height | 0.8mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type P | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TSMT-8 | ||
Series RQ7E100AT | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 14.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 3.1mm | ||
Width 2.5mm | ||
Maximum Operating Temperature 150 °C | ||
Typical Gate Charge @ Vgs 53 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Height 0.8mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- TH
RQ7E100AT is low on-resistance MOSFET for switching.
Low on - resistance.
Small Surface Mount Package (TSMT8).
Pb-free lead plating
Small Surface Mount Package (TSMT8).
Pb-free lead plating
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