Infineon IPB020N10N5 Type N-Channel MOSFET, 176 A, 100 V Enhancement, 5-Pin TO-263 IPB020N10N5ATMA1

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Subtotal (1 pack of 5 units)*

$53.36

(exc. GST)

$58.695

(inc. GST)

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Units
Per unit
Per Pack*
5 - 245$10.672$53.36
250 - 495$10.402$52.01
500 +$10.244$51.22

*price indicative

Packaging Options:
RS Stock No.:
171-1955
Mfr. Part No.:
IPB020N10N5ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

176A

Maximum Drain Source Voltage Vds

100V

Series

IPB020N10N5

Package Type

TO-263

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

2.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

168nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.31mm

Height

4.57mm

Width

11.05 mm

Automotive Standard

No

The Infineon IPB020N10N5 is optiMOS 5 100V power MOSFET in D2PAK package with 22% lower RDS(on). Its especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications.

Optimized for synchronous rectification

Ideal for high switching frequency

Output capacitance reduction of up to 44%

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