Infineon IPB020N10N5 Type N-Channel MOSFET, 176 A, 100 V Enhancement, 5-Pin TO-263

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Subtotal (1 reel of 1000 units)*

$5,272.00

(exc. GST)

$5,799.00

(inc. GST)

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Per Reel*
1000 - 4000$5.272$5,272.00
5000 +$4.745$4,745.00

*price indicative

RS Stock No.:
170-2293
Mfr. Part No.:
IPB020N10N5ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

176A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

IPB020N10N5

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

2.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

168nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

175°C

Length

10.31mm

Standards/Approvals

No

Height

4.57mm

Width

11.05 mm

Automotive Standard

No

The Infineon IPB020N10N5 is optiMOS 5 100V power MOSFET in D2PAK package with 22% lower RDS(on). Its especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications.

Optimized for synchronous rectification

Ideal for high switching frequency

Output capacitance reduction of up to 44%

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