N-Channel MOSFET, 180 A, 40 V, 3-Pin DPAK Infineon IRFR7440TRPBF
- RS Stock No.:
- 168-6002
- Mfr. Part No.:
- IRFR7440TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 2000 units)**
$1,990.00
(exc. GST)
$2,190.00
(inc. GST)
4000 In Global stock for delivery within 10 working day(s)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over $80.00 ex GST
Units | Per unit | Per Reel** |
---|---|---|
2000 - 8000 | $0.995 | $1,990.00 |
10000 + | $0.895 | $1,790.00 |
**price indicative
- RS Stock No.:
- 168-6002
- Mfr. Part No.:
- IRFR7440TRPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 180 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | DPAK (TO-252) | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 2.4 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.9V | |
Minimum Gate Threshold Voltage | 2.2V | |
Maximum Power Dissipation | 140 W | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Width | 2.39mm | |
Maximum Operating Temperature | +175 °C | |
Length | 6.73mm | |
Typical Gate Charge @ Vgs | 89 nC @ 20 V | |
Forward Diode Voltage | 1.3V | |
Height | 6.22mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 140 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 2.39mm | ||
Maximum Operating Temperature +175 °C | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 89 nC @ 20 V | ||
Forward Diode Voltage 1.3V | ||
Height 6.22mm | ||
Minimum Operating Temperature -55 °C | ||
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