Infineon HEXFET N-Channel MOSFET, 180 A, 40 V, 3-Pin DPAK IRFR7440TRPBF
- RS Stock No.:
- 130-0989
- Mfr. Part No.:
- IRFR7440TRPBF
- Brand:
- Infineon
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Subtotal (1 pack of 5 units)*
$12.54
(exc. GST)
$13.795
(inc. GST)
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In Stock
- 30 unit(s) ready to ship from another location
- Plus 5,345 unit(s) shipping from 17 November 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 495 | $2.508 | $12.54 |
| 500 - 995 | $2.462 | $12.31 |
| 1000 + | $2.412 | $12.06 |
*price indicative
- RS Stock No.:
- 130-0989
- Mfr. Part No.:
- IRFR7440TRPBF
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 180 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 140 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.73mm | |
| Width | 2.39mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 89 nC @ 20 V | |
| Maximum Operating Temperature | +175 °C | |
| Height | 6.22mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 180 A | ||
Maximum Drain Source Voltage 40 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 140 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.73mm | ||
Width 2.39mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 89 nC @ 20 V | ||
Maximum Operating Temperature +175 °C | ||
Height 6.22mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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