N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110GPBF

RS Stock No.:: 145-9698
Mfr. Part No.:: IRFB4110GPBF
Brand:: Infineon

N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110GPBF

This image is representative of the product range

200 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Tube of 50)

$9.273

(exc. GST)

$10.20

(inc. GST)

Units	Per unit	Per Tube*
50 - 50	$9.273	$463.65
100 - 150	$9.041	$452.05
200 +	$8.902	$445.10
*price indicative

RS Stock No.:: 145-9698
Mfr. Part No.:: IRFB4110GPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	4.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	370 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	150 nC @ 10 V
Width	4.83mm
Transistor Material	Si
Length	10.67mm
Height	16.51mm
Minimum Operating Temperature	-55 °C