Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-247

RS Stock No.:: 124-9014
Mfr. Part No.:: IRFP4110PBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-247

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Bulk discount available

Subtotal (1 tube of 25 units)*

$130.775

(exc. GST)

$143.85

(inc. GST)

FREE delivery for orders over $60.00 ex GST

In Stock

25 unit(s) ready to ship from another location
Plus 400 unit(s) shipping from 19 March 2026

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Units	Per unit	Per Tube*
25 - 25	$5.231	$130.78
50 - 75	$5.104	$127.60
100 +	$5.022	$125.55

*price indicative

RS Stock No.:: 124-9014
Mfr. Part No.:: IRFP4110PBF
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	150nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	370W
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Length	15.87mm
	Width	5.31 mm
	Height	20.7mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 150nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 370W
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Length 15.87mm
	Width 5.31 mm
	Height 20.7mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: MX

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