Vishay SiR416DP N-Channel MOSFET, 27 A, 40 V Enhancement, 8-Pin SO-8 SIR416DP-T1-GE3

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RS Stock No.:
165-7265
Mfr. Part No.:
SIR416DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

40V

Series

SiR416DP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.2mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.7V

Typical Gate Charge Qg @ Vgs

59nC

Maximum Gate Source Voltage Vgs

-20V, +20V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

69W

Maximum Operating Temperature

150°C

Length

6.25mm

Standards/Approvals

No

Width

5.26mm

Height

1.12mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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